Spice Model Parameters
Spice Name | Symbol | Model Parameter | Units | Default |
---|---|---|---|---|
Level | Model Type | 1 | ||
KP | $ \mu C_{OX} $ | Transconductance coefficient | $A/V^2$ | 20$\mu$ |
VTO | $V_{t0}$ | Zero-bias threshold voltage | $V$ | 0 |
LAMBDA | $\lambda$ | Channel-length modulation parameter |
$V^{-1}$ | 0 |
GAMMA | $\gamma$ | Body-effect parameter | $V^{1/2}$ | 0 |
PHI | $\phi_f$ | Surface Potential | $V$ | 0.6 |
W | $W$ | Channel width | Meters | Defined |
L | $L$ | Channel length | Meters | Defined |
WD | $W_D$ | Lateral diffusion width 横向扩散宽度 |
Meters | 0 |
LD | $L_D$ | Lateral diffusion length 横向扩散长度 |
Meters | 0 |
TOX | $T_{ox}$ | Oxide thickness | Meters | $\infty$ |
UO | $\mu$ | Channel mobility | $cm^2/V/s$ | 350 |
RD | $R_d $ | Drain ohmic resistance | $\Omega$ | 0 |
RS | $R_s$ | Source ohmic resistance | $\Omega$ | 0 |
RG | $R_g$ | Gate ohmic resistance | $\Omega$ | 0 |
RB | $R_b$ | Bulk ohmic resistance | $\Omega$ | 0 |
RDS | $R_{ds}$ | Drain-source shunt resistance 漏-源旁路电阻 |
$\Omega$ | $\infty$ |
CGSO | $C_{GSO}$ | Gate-source overlap capacitance / channel width |
$F/m$ | 0 |
CGDO | $C_{GDO}$ | Gate-drain overlap capacitance/channel width |
$F/m$ | 0 |
CGBO | $C_{GBO}$ | Gate-bulk overlap capacitance/channel width |
$F/m$ | 0 |
KF | $K_f$ | Flicker noise coefficient | 0 | |
AF | $A_f$ | Flicker noise exponent | 1 | |
In addition to that, sometimes we need to guestimate the operating points of the transistors, so it’s important to know the Transconductance coefficient. However, the PDK file may not show that directly, which means it needs to be calculated. To get that, we need two coefficients: UO($\mu$) and TOX($T_{ox}$), and then it can be calculated:
\[KP = UO \times \frac{8.85\times 10^{-14} \times 3.9 \ \ F/cm}{TOX}\]be careful with the units.
Copyright Statement
This article is an Original Work of Bohao, if reprinted, please indicate the source: http:/merenguelee.github.io/2022/11/01/Spice-Model-Parameters/